Domain Wall Propagation Model

B theoretical prediction on the domain wall velocity v vs.

Domain wall propagation model. In this figure r 0 denotes the wire radius and r b the radius of the internal core with magnetization along the axial direction. A compact model of domain wall propagation for logic and memory design nasa ads. Electric field e in system governed by competi tion between disorder and elasticity effects.

The domain wall thickness depends on the anisotropy of the material but on average spans across around 100 150 atoms. This paper presents a theoretical study of transverse domain wall behavior under the influence of a magnetic field within a cylindrical nanowire with diameter modulations. The bloch point motion then changes from a linear motion to a spiraling motion.

A domain wall is a gradual reorientation of individual moments across a finite distance. Current driven domain wall motion is very promising for low power high density and high speed circuits. Elastic forces come from the curvature of domain wall and defects work as strong pinning sites.

The domain configuration during the propagation of the wall is schematically depicted in fig. Introduction the study of domain wall dw propagation in magnetic nanostructures is a subject of great current. The field dependence of domain wall velocity is well described by a creep model of a 1d wall in the presence of weak disorder with critical exponent µ 1 4.

By combining this shifting scheme with magnetic tunnel junction mtj for reading and writing processes it opens new routes for nonvolatile logic and memory. In all cases the domain wall motion and the applied field direction is to the right. Domain wall propagation by spin orbit torques in in plane magnetized systems r.

Color online a a schematic diagram of domain wall propagation in disordered medium. 6 indicating the normal v and axial v x velocities of the wall. While at low fields the domain wall essentially remains unchanged a the bloch point in the middle starts lagging behind the domain wall at intermediate fields b.